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Inspired by 3.7V 18650 lifepo4 battery, memory chips have made breakthroughs
All digital devices that perform any form of information processing require not only processing units but also fast memories that can temporarily save the inputs, partial results, and outputs of the operations performed. In computers, this memory is called dynamic random access memory, or DRAM. The speed of DRAM is very important and can have a significant impact on the overall speed of the system. In addition, reducing the energy consumption of storage devices has recently become a hot topic to achieve highly energy-efficient computing. Therefore, much research has focused on testing new memory technologies to surpass the performance of conventional DRAM.
The most basic unit in a memory chip is the memory unit. Each cell typically stores a bit by taking and holding one of two possible voltage values, which corresponds to the stored value of "0" or "1". The characteristics of a single unit largely determine the performance of the entire memory chip. Simpler, smaller units with high speed and low energy consumption would be ideal for taking efficient computing to the next level.
A research team at Tokyo Institute of Technology, led by Professor Taro Hitosugi and student Yuki Watanabe, recently reached a new milestone in this field. The researchers had previously developed a novel storage device inspired by the design of solid-state lithium-ion batteries. It consists of three solid layers made of lithium, lithium phosphate and gold. The battery pack is essentially a tiny low-capacity battery that serves as a storage unit. It can quickly switch between charging and discharging states that represent two possible values for a bit. Gold then combines with lithium to form a thick alloy layer, increasing the energy required to switch from one state to another.
In their latest study, the researchers created similar three-layer memory cells using nickel instead of gold. They expected better results using nickel, which does not readily alloy with lithium, which would reduce energy consumption when switching. The storage devices they produce are much better than the last one. It can actually hold three different voltage states instead of two, meaning it's a three-valued storage device. "This system can be viewed as an extremely low-capacity thin-film lithium battery with three states of charge," explains Professor Hitosugi. "This is a very interesting feature with potential advantages for triple-valued memory implementations, which may increase area efficiency." .
The researchers also found that a very thin nickel oxide layer formed between the nickel and lithium phosphate layers and that this oxide layer was critical for the device's low-energy switching. The oxide layer is much thinner than that of the gold-lithium alloy formed in previous devices, which means the new "microbattery" cells have a very low capacity and can therefore be switched between three states of charge by applying a tiny current. Switch quickly and easily. Professor Hitosugi said: "The extremely low energy consumption potential is the most significant advantage of this device."
Higher speed, lower energy consumption and smaller size are all highly demanded features of future storage devices. The memory cells developed by the research team are a very promising stepping stone towards more energy-efficient and faster computing.
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