CR2016 battery

Preset of functional current of proton CR2016 battery throttling component

The peripheral circuit is connected in series with the discharge protection MOS tube and the charge protection MOS tube. The COUT output signal is added to the gate of the charge protection MOS tube. When COUT is low, the charge MOS tube is turned off, otherwise it is turned on. The working mode of the DOUT output signal is the same as COUT. When the VDD voltage drops below VREL1-, COUT outputs a high level to allow the peripheral circuit to work again.

When discharging the lithium CR2016 battery, the voltage changes from high to low. If the voltage is lower than VDET2 (over-discharge threshold voltage), after a TVDET2 delay, a low level is output at the chip pin DOUT to cut off the peripheral circuit and no longer discharge the lithium CR2016 battery. When it is detected that the voltage at the V-pin is greater than VDET3 (overcurrent detection threshold voltage), a low level is output at DOUT after a TVDET3 delay to cut off the peripheral circuit. If the voltage further increases and exceeds Vshort, the short-circuit protection circuit immediately outputs a low level to cut off the peripheral circuit.

Design of the functional circuit of the chip Design of the reference circuit The output voltage of the voltage reference circuit is adjustable, and an adjustable switch is connected in parallel to the source and drain of the NMOS tube. Due to the inevitable process errors in the manufacturing process of integrated circuits, the deviation between the reference voltage output and the nominal value is caused.

The output voltage can be adjusted by controlling the on-off of the switch by laser. Make the output consistent with the nominal value. The on-resistance of the NMOS tube connected in parallel with the switch is relatively small, and during the adjustment process, it will not cause a significant change in the output voltage. M1, M2, M3, and M4 in are depleted NMOS tubes, with gate and source connected and working in the saturation region, and the channel modulation effect of the NMOS tube can be ignored. When the power supply voltage changes, this change is converted into a VDS change, which will not affect the current. VGS1 is the gate-source voltage after M5, M6, and M7 are equivalent to a MOS tube, and VGS2 is the gate-source voltage after M8, M9, and M10 are equivalent to a MOS tube. M5-M10 are enhancement MOS tubes, working in saturation. The voltage VJIZHUN output is used as the reference voltage for the comparators VD1 and VD2.

Bias circuit design Bias circuits such as PIANZHI1 are used to bias several PMOS tubes in the circuit, and PIANZHI2 are used to bias several NMOS tubes in the circuit. Make the biased NMOS tubes and PMOS tubes work in saturation. In the application, the two PMOS tubes N4 and N5 form a current mirror, the diode connection of the N6 tube forms an active resistor, and the three depletion NMOS tubes N7, N8, and N9 and the resistor R1 form a constant current source. By adjusting R1 to adjust the current flowing through N5, the current flowing through N4 is determined, and the current and the resistance value of the N6 tube jointly determine the output value of the PIANZHI2 voltage.

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